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New Product Introduction

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onsemi J-SERIES silicon photomultiplier sensors

J-Series silicon photomultiplier (SiPM) sensors from onsemi have been optimized for high-performance timing applications, such as ToF-PET

J-Series silicon photomultiplier (SiPM) sensors from onsemi have been optimized for high-performance timing applications, such as ToF-PET (time of flight positron emission tomography). Due to increased microcell density, J-Series sensors can achieve a photon detection efficiency (PDE) of 50% and with sensitivity extending down into the UV. They feature industry-leading low dark count rates of 50 kHz/mm2 and because the sensors are created using a high-volume CMOS silicon process they feature an exceptional breakdown voltage uniformity of ±250 mV.

Key features

Optimized for high-performance timing applications, such as ToF-PET
TSV package results in almost zero deadspace allowing high fill factor arrays
Industry-leading uniformity
3 mm, 4 mm and 6 mm sensor sizes

Additional features

High-density microcells
J-Series sensors feature unique 'fast output' terminal from onsemi
Temperature stability of 21.5 mV/°C
Exceptional breakdown voltage uniformity of ±250 mV
Available in a reflow solder compatible TSV chip-scale package
Ultra-low dark count rates of 50 kHz/mm2 typical
Optimized for high-performance timing applications, such as ToF-PET
3 mm, 4 mm and 6 mm sensor sizes
Bias voltage of <30 V
Results in a 50% photon detection efficiency (PDE) at 420 nm
Improved signal rise time and the microcell recovery time
Negates the need for active voltage control
Industry-leading uniformity
TSV package results in almost zero deadspace allowing the creation of high fill factor arrays and is ferrous-metal free