onsemi FFSB10120A EliteSiC diode, 1200V, 10A, D2PAK

EliteSiC Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets EliteSiC as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.

Key features

• Max Junction Temperature 175°C
• Avalanche Rated 200 mJ
• No Reverse Recovery/No Forward Recovery
• Ease of Paralleling
   

Additional features

• Max Junction Temperature 175°C
• Avalanche Rated 200 mJ
• No Reverse Recovery/No Forward Recovery
• Ease of Paralleling
• High Surge Current Capacity
• Positive Temperature Coefficient

Applications

• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits