NXP Semiconductors MRF300AN 300W RF LDMOS transistor

This high ruggedness device is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz.

• Two opposite pin--connection versions (A and B) to be used in a push--pull, two--up configuration
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
   

Key features

• Low - Cost and Flexible Mounting
• PA design reuse over frequencies
• Two mirrored pin configurations enabling wideband designs
• Designed for ease of use

Additional features

• Unmatched input and output allowing wide frequency range utilization
• Two opposite pin-connection versions (A and B) to be used in a push-pull, two-up configuration
• Characterized from 30 to 50 V
• Suitable for linear application
• Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Applications

• Industrial, scientific, medical (ISM)
• Laser generation
• Plasma etching
• Particle accelerators
• MRI and other medical applications
• Industrial heating, welding and drying systems