NXP Semiconductors MRF101AN/BN 100W RF LDMOS transistor

100W CW extremely rugged RF Power transistor designed for use in VHF/UHF communications, VHF TV, broadcast and aerospace applications as well as industrial, scientific and medical applications.

The devices are exceptionally rugged and exhibit high performance up to 250 MHz.

Key features

• Housed in TO- 220 package with source pin and bolt-down flange
• Modular architecture for scalibility: 2 pin-out versions for push-pull configurations
• Supported by compact reference circuits using similar PCB for different frequencies
• Designed for ease-of-use

Additional features

• Mirror pinout versions (A and B) to simplify use in a push-pull, two-up configuration
• Characterized from 30 to 50 V
• Suitable for linear application
• Integrated ESD protection with greater negative gate--source voltage range for improved Class C operation
• Included in NXP product longevity program with assured supply for a minimum of 15 years after launch

Applications

• Industrial, Scientific, Medical: Laser gen, Plasma etching
• MRI, medical applications, Industrial heating
• Broadcast: Radio broadcast, VHF TV broadcast
• Mobile Radio: VHF base stations, HF and VHF communications
• Switch mode power supplies

Available tools 

Test fixture available:

• 13.56 MHz Compact
• 27 MHz Compact
• 40.68 MHz Compact
• 50 MHz Compact
• 81.36 MHz
• 87.5 MHz -108 MHz - FM
• 136 MHz -174 MHZ  Compact - VHF
• 230 MHz