Infineon StrongIRFET™ in TO-247AC package

EBV presents Infineon’s latest 200-300 V StrongIRFET™ devices, which are optimized for both high current and low RDS(on) making them the ideal solution for industrial applications. The flagship IRF200P222 offers a 40 percent increase in current carrying capability and 32 percent lower RDS(on) when compared to previous generation devices leading to increased power density and reduction in I2R losses.

Key features

• RDS(on) improvement when compared to previous generations
• High-current carrying capability
• 175°C junction temperature rated
• Gate, avalanche, and dynamic dV/dT ruggedness

Additional features

• Fully characterized capacitance and avalanche SOA Industry standard footprint
• Reduced conduction losses
• RDS(on) improvement when compared to previous generations, > 30% @ 200V
• High-current carrying capability, up to 40% higher than previous generations
• Reduction in BOM count
• Ideal for industrial applications
• Rugged, reliable performance
• Accommodates legacy designs

Applications

• Uninterruptible power supply (UPS)
• Class D audio amplifier
• Solar power inverter
• Switched mode power supply (SMPS)
• Brushed and BLDC motor drive
• Battery powered circuits