Infineon New 1200 V TRENCHSTOP™ IGBT6 technology

Next generation 1200 V IGBT technology – next level efficiency by improvement both conduction and switching losses.

The TRENCHSTOP™ IGBT6 is released in two product families – low conduction losses optimized S6 series and improved switching losses H6 series.

Key features

• Low conduction losses with 1.85 V Vce(sat) for S6 series
• High Rg controllability
• Full rated, soft and robust freewheeling diode
• Low EMI

Additional features

• Best combination of switching and conduction losses for switching frequency 15 – 40 kH
• Highest current of 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint
• Easy, plug & play replacement of predecessor HighSpeed3 H3 IGB
• 0.15% system efficiency improvement when changing from H3 to S6 in TO-247-31
• 0.20% system efficiency improvement when changing from H3 to S6 in TO-247PLUS 4pin
• Suitable for high power designs above 20 kW with less paralleling
• Easy adjustment of the device to the switching speed required in application due to high Rg controllability

Applications

• Welding machine inverter HB or FB topology
• UPS main inverter T-type, B6 topology
• Solar Boost and main inverter
• Motor drive B6 technology
• PFC, Boost

Available tools

EVAL-IGBT-1200V-247

Family: Gate Driver, IGBT Discrete

Description: Adaptable double pulse tester for IGBTs in TO-247 4pin package

SP001845836