Infineon Easy 1B, 2B - CoolSiC™ MOSFET power modules

Easy power modules with CoolSiC™ MOSFET open up new opportunities for inverter designers to realize never before seen levels of efficiency and power density. 

Combining the strengths of the Easy power modules, that set a benchmark in low stray inductance, with the strengths of Infineon’s 1200V CoolSiC™ MOSFET chip enables our customers to reduce system and operational costs significantly.

Key features

• About 80% lower switching losses compared to Si
• Low conduction losses due to linear output characteristic
• Broadest portfolio of CoolSiC™ MOSFET in Easy package on the market
• Superior gate oxide reliability

Additional features

• Intrinsic body diode with low reverse recovery charge
• Highest threshold voltage of Vth > 4 V
• Specified short circuit capability of 2µs
• Reduced system costs since 2-3 times higher switching frequencies are possible. Reduced operational costs due to higher efficiency
• Tailoring inverter design to application needs due to 3 different available topologies
• Longer lifetime and better long term stability of inverter system
• Increased power density
• Highest robustness against parasitic turn-on
• Ready to use for applications with SC requirement

Applications

• Solar
• UPS
• Energy storage
• EV-Charging
• Medical

Available tools

EVAL-1EDC20H12AH-SIC:
Gate Driver, SiC MOSFET

1EDC20H12AH and CoolSiC™ MOSFET IMZ120R045M1 were developed to demonstrate the functionality and key features of the Infineon EiceDRIVER™ and Infineon CoolSiC™ MOSFET. 1EDC20H12AH is certified according to UL 1577 with VISO = 2500 V for 1 min.

Half-bridge SiC MOSFET with gate driver and over-current protection

EVAL-PS-E1BF12-SIC:
MOSFET

This board has the purpose to enable the evaluation of the FF11MR12W1M1_B11 and FF23MR12W1M1_B11 CoolSiC™ MOSFET modules.

For evaluation of the FF11MR12W1M1_B11 and FF23MR12W1M1_B11 CoolSiC™ MOSFET modules