Infineon CoolGaN™ 600 V e-mode GaN HEMTs

Gallium nitride (GaN) offers fundamental advantages over silicon. In particular the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific on resistance and smaller capacitances compared to silicon switches, which makes GaN HEMTs great for high speed switching.

The enhancement mode concept offers fast turn-on and turn-off speed as well as a better path towards integration either on a chip or package level. CoolGaN™ enables simpler half-bridge topologies.

Key features

• Best FOM among 600 V power devices
• Excellent for hard and soft switching topologies
• Optimized for turn-on and turn-off
• The cutting-edge technology for innovative solutions and high volumes

Additional features

• Highest efficiency for SMPS
• Highest power density, small and light design
• Surface mount packaging ensures that switching capabilities of GaN are fully accessed
• Easy-to-use thanks to a compelling driver IC portfolio

Applications

• Server SMPS
• Telecom
• Adapter and charger
• Wireless Charging
• Class D audio

Available tools

EVAL_HB_PARALLELGAN

• How to parallel CoolGaN™ 600 V HEMT in Half Bridge
• Order Code: EVALHBPARALLELGANTOBO1

EVAL_1EDF_G1_HB_GAN

• GaN half-bridge evaluation platform
• Order Code: EVAL1EDFG1HBGANTOBO1

EVAL_2500W_PFC_GAN_A 

• 2500 W full-bridge totem-pole power factor correction evaluation board using CoolGaN™ 600 V e-mode HEMT
• Order Code: EVAL2500WPFCGANATOBO1