Infineon BGSX22G2A10 high power antenna cross switch (DPDT)

EBV presents the BGSX22G2A10 RF MOS switch which is specifically designed for LTE and WCDMA triple antenna applications. The on-chip controller allows power-supply voltages from 2.3V to 3.4V. Unlike GaAs technology, external DC blocking capacitors at the RF Ports are only required if DC voltage is applied externally. The BGSX22G2A10 RF Switch is manufactured in Infineon’s patented MOS technology, offering the performance of GaAs with the economy and integration of conventional CMOS including the inherent higher ESD robustness.

Key features

• Small footprint, easy for integrations
• Allows the alternation of Antennas, RF paths
• Decrease correlations between antennas
• Operates up to 6GHz frequency range (5G)

Additional features:

• RF CMOS DPDT antenna cross switch with power handling capability of up to 36.5 dBm
• Ultra-low insertion loss and harmonics generation
• 0.1 to 6.0 GHz coverage
• High port-to-port-isolation
• No decoupling capacitors required if no DC applied on RF lines
• General Purpose Input-Output (GPIO) Interface
• Small form factor 1.15mm x 1.55mm
• No power supply blocking required
• High EMI robustness
• RoHS and WEEE compliant package

Applications

• UL-CA support
• MMO
• 2G/3G/4G
• antenna selections