Infineon 2ED2304S06F 650 V half bridge gate driver IC

EiceDRIVER™ 650 V Infineon SOI half-bridge gate driver IC with integrated Bootstrap Diode for IGBTs and MOSFETs with 0.36 A source and 0.7 A sink currents in DSO-8 package. Using Infineon thin-film-SOI technology, 2ED2304S06F provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction.

Key features

• Infineon thin-film-SOI-technology
• Fully operational to +650 V offset voltage
• Integrated ultra-fast, low RDSON bootstrap diode
• Output source/sink current capability +0.36 A/-0.7 A

Additional features

• Tolerant to negative transient voltage up to 50 V (pulse width is up 500 ns) given by SOI-technology
• Gate drive supply range from 10 to 20 V
• Independent under-voltage lockout for both channels
• Short propagation delay and delay matching (60 ns, Maximum)
• Schmitt trigger inputs with hysteresis and pull down
• 3.3 V, 5 V and 15 V input logic compatible
• Integrated Bootstrap Diode -> Reduced system BOM cost
• -100V negative VS immunity -> increased reliability / robustness
• high frequency operation above 100kHz
• 50% lower Level shift losses -> lower temperature operation and higher reliability
• Latch-up immune -> increased reliability
• Flexible, small PCB footprint, & easy to use device with footprint compatibility to IRS2304 / IR2304

Applications

• Major Home Applications
• Small Home Applications
• AC wired power tools
• Cooling compressors and fans
• Pumps and fans
• Motor control and low power devices
• General inverter applications below 1kW
• Half-Bridge LLC application