Vishay SISS22DN N-channel 60 V (D-S) MOSFET

SiSS22DN 60 V in PowerPAK® 1212-8S features less than 4 mΩ. The lowest maximum R_DS(ON) in its class reduces conduction loss and increases power density. Excellent RDS x Qg and RDS x Qoss FOM enables efficiency improvement.

Key features

• Excellent RD_S(ON) x Qg and RD_S(ON) x Qoss FOM enables efficiency improvement
• Very low Qg reduces power loss from gate driving
• Very low Qoss cuts unplanned power loss during diode conduction
• The lowest maximum RD_S(ON) in its class

Additional features

• Achieves higher peak efficiency
• More efficiency at full load
• Drop-in upgrade
• RD_S(ON) less than 4 mΩ
• The lowest maximum RD_S(ON) in its class
• Reduce conduction loss and increase power density

Applications

• Synchronous Rectification
• Primary-Side Switches
• Topologies for DC/DC Conversion
• Buck-Boost Converters
• Motor Drive Control
• Battery Protection and Switching

Available tools

SPICE models, RC Thermal Model, MOSFET selector Tool, and Parametric search:

• https://www.vishay.com/ppg?77889&designtools-ppg