Vishay SiR638ADP© n-channel 40 V (D-S) MOSFET
Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size
Vishay's next-generation TrenchFET® family of N-Channel power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN offer industry-low on-resistance and low total gate charge in the PowerPAK®SO-8 and 1212-8S packages. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption, space saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size.
Key features
- TrenchFET® Gen IV power MOSFET
- 100 % Rg and UIS tested
- Qgd/Qgs ratio < 1 optimizes switching
- 100 % Rg and UIS tested
Additional features
- TrenchFET® Gen IV power MOSFET
- Qgd/Qgs ratio < 1 optimizes switching characteristics
Applications
- Synchronous rectification
- OR-ing
- High power density DC/DC
- VRMs and embedded DC/DC
- DC/AC inverters
- Load switch
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