Vishay SiA468DJ 30V n-channel TrenchFET® Gen IV power MOSFET

NEW 30 V n-channel TrenchFET® Gen IV power MOSFET that delivers increased power density and efficiency for consumer electronics and power supplies. Offered in the ultra compact PowerPAK® SC-70 package, provides the industry’s lowest on-resistance and highest continuous drain current for 30 V devices in 2 mm by 2 mm plastic packages.

The MOSFET released today is one of the most compact 30 V solutions available for DC/DC conversion and load switching for battery management

SiA468DJ features extremely low on-resistance of 8.4 mΩ at 10 V and 11.4 mΩ at 4.5 V.

Key features

• TrenchFET® Gen IV power MOSFET
• 100 % Rg tested
• The highest continuous drain current capability
• Very low RDS-Qg FOM and Qgd elevate efficiency

Additional features

• Increase power density of your design
• 60 % smaller than devices in the PowerPAK 1212
• 37.8 A continuous drain current is 68 % higher than previous-generation devices and 50 % higher than the closest competing solution

Applications

• DC/DC converters and synchronous buck converters
• Lower ringing voltage from soft turn-on
• High efficiency from fast turn-off
• Lower shoot-through possibility
• Battery charging and protection
• Load switch