Vishay SiR668DP Siliconix TrenchFET® Gen IV n-channel MOSFET
These new devices utilize a new high-density design and offer industry-low on-resistance and low total gate charge in the PowerPAK®SO-8 package
Vishay Siliconix TrenchFET® Gen IV N-Channel MOSFETs are Vishay's next-generation TrenchFET® family of N-Channel power MOSFETs. These new devices utilize a new high-density design and offer industry-low on-resistance and low total gate charge in the PowerPAK®SO-8 package. Features include extremely low RDS(on), which translates to lower conduction losses for reduced power consumption. Typical applications include high power DC/DC converters, synchronous rectification, solar micro inverters, and motor drive switch.
Key features
- Very low R<sub>DS</sub> - Qg figure-of-merit (FOM)
- Tuned for the lowest R<sub>DS</sub> - Q<sub>oss</sub> FOM
- 100 % R<sub>g</sub> and U<sub>IS</sub> tested
- TrenchFET® Gen IV power MOSFET
Additional features
Next-generation technology optimizes several key specifications
- Down to industry best RDS(on) of 0.00135Ω at VGS = 4.5V
- Down to ultra-low RDS(on) of 0.001 Ω at VGS = 10V
- Very low Qgd and exceptionally low QGD/QGS ratio: < 0.5
- QGD/QGS ratio down to 0.3
- Improved immunity to CdV/dt gate coupling
Applications
- Synchronous rectification
- Primary side switch
- DC/DC converters
- OR-Ing
- Power supplies
- Motor drive control
- Battery and load switch
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