NXP AFM906N RF LDMOS Transistor for VHF and UHF radios
This is a 6 watt, 7.5 V LDMOS transistor in 4x6 mm DFN SMD package designed for handheld two-way radio applications with frequencies from 136 to 941 MHz.
This is a 6 watt, 7.5 V LDMOS transistor in 4x6 mm DFN SMD package designed for handheld two-way radio applications with frequencies from 136 to 941 MHz.The high gain, ruggedness and wideband performance of this device makes it ideal for large-signal, common-source amplifier applications in handheld radio equipment.
Key features
- Characterized for operation from 136 to 941 MHz
- Unmatched I/O allowing wide frequency range utilization
- Integrated ESD protection
- High linearity; suitable for TETRA, SSB. etc
Additional features
- 4x6 mm DFN SMD package
- Characterized for operation from 136 to 941 MHz
- Unmatched input and output allowing wide frequency range utilisation
- Extreme ruggedness (>65:1 VSWR)
- Integrated ESD protection
- Wideband - full power across the band
- High linearity; suitable for TETRA, SSB. etc
Applications
- Output stage for VHF band handheld LMR radio
- Output stage UHF band handheld LMR radio
- Output stage for 800-900 MHz handheld LMR radio
- Generic 6 W driver for ISM and broadcast final stage
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