Infineon IR MOSFET™ 60 V/ 80 V/ 100 V for low VGS

EBV presents Infineon’s latest generation of 60 V, 80 V, and 100 V power MOSFETs in PQFN 2 x 2 package which utilizes very high end OptiMOS™ 5 logic level silicon to achieve benchmark performance in high speed switching and small form factor applications.

Key features

• Very small package footprint
• Higher power density designs
• Higher switching frequency
• Reduced parts count wherever 5 V supplies are available

Additional features:

• Driven directly from microcontrollers (slow switching)
• System cost reduction
• Very low FOM (RDS(on) x Qg/gd)
• Optimized Qg, Coss, and Qrr for fast switching
• Logic level compatibility
• Tiny PQFN 2 x 2 mm package

Applications

• Wireless charging
• Telecom
• Adapter