Infineon DF11MR12W1M1&DF23MR12W1M1 easy 1B booster topology
DF11MR12W1M1 & DF23MR12W1M1 are the lead products based on the CoolSiC™ Mosfet technology.
EBV presents the lead products based on the CoolSiC™ Mosfet technology:
EasyDUAL™ 1B 1200 V / 11 and 23 mΩ halfbridge modules with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology and the Easy 1B 1200 V / 11 and 23 mΩ booster module with CoolSiC™ MOSFET, NTC and PressFIT Contact Technology.
Key features
- Low device capacitances
- Temperature independent switching losses
- Intrinsic diode with low reverse recovery charge
- Threshold-free on-state characteristics
Benefits
- Highest efficiency for reduced cooling effort
- Longer lifetime and higher reliability
- Higher frequency operation
- Reduction in system cost
- Increased power density
- Reduced system complexity
- Ease of design and implementation
Applications
- Photovoltaic inverter
- UPS
- EV charger
- Energy storage / battery charging
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