Infineon 700 V CoolMOS™ P7 SJ MOSFET™

EBV presents the price/performance optimized 700 V CoolMOS™ P7 SJ MOSFET and in combination with the IPAK Short Lead with ISO-standoff package increased yields and cost reduction can be reached.

Infineon’s latest 700 V superjunction MOSFET technology has been developed to serve today’s and tomorrow’s trends in flyback topologies. The CoolMOS™ P7 is offering amazing performance gains compared to superjunction technologies used today, especially at high speed switching.

With IPAK Short Lead, Infineon offers a package with a well-defined mold feature at the bottom of the package body.

Key features

• More effective cleaning in terms of residue removing
• Resulting in better assembly yield
• Larger effective creepage distance between legs
• More suitable for charger application

Additional features:

• Extremely low FOM RDS(on) x Eoss; lower Qg, Eon, and Eoff.
• Highly performant technology
• Low switching losses (EOSS)
• Highly efficient
• Excellent thermal behavior
•  Allowing high speed switching
• Integrated Zener diode
• Optimized V(GS)th of 3 V with very narrow tolerance of ±0.5 V
• Finely graduated portfolio
• Cost competitive technology
• Up to 2.4% efficiency gain and 12°K lower device temperature compared to C6 technology
• Further efficiency gain at higher switching speed
• Supporting less magnetic size with lower BOM costs
• High ESD ruggedness up to HBM Class 2 level
• Easy to drive and design in
• Enabler for smaller form factors and high power density design
• Excellent choice in selecting the best fitting product

Applications

• Charger Applications