Infineon 600 V CoolMOS™ P7 power MOSFET

EBV presents the new 600 V CoolMOS™ P7, which offers a perfect balance between performance, ease-of-use, price and portfolio granularity.It brings efficiency gains of up to 1.5% in various topologies, and up to 4.2° C thermal benefits compared to other comparable devices. In addition suitable for hard and soft switching (PFC and LLC) and ease-of-use and fast design-in through low ringing tendency and usage across PFC and PWM stages.The 600 V CoolMOS™ P7 family simplified thermal management due to low switching and conduction losses with higher manufacturing quality due to >2 kV ESD protection.

Key features

• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2 kV (HBM) for all products
• Large portfolio with granular RDS(on) selection
• Outstanding commutation ruggedness

Features:

• Outstanding commutation ruggedness
• Optimized balance between efficiency and ease-of-use
• Significant reduction of switching and conduction losses
• Excellent ESD robustness >2 kV (HBM) for all products
• Better RDS(on)/package products compared to competition enabled by a low RDS(on) x A (below 1 Ωx mm²)
• Large portfolio with granular RDS(on) selection qualified for a variety of industrial and consumer grade applications
   

Benefits:

• Suitable for hard and soft switching (PFC and LLC)
• Ease-of-use and fast design-in through low ringing tendency and usage across PFC and PWM stages
• Simplified thermal management due to low switching and conduction losses
• Higher manufacturing quality due to >2 kV ESD protection
• Increased power density solutions enabled by using products with smaller footprint
• Suitable for a wide variety of applications and power ranges

Applications

• Server
• Telecom
• PC power
• Solar
• EV charging
• Lighting and TV